Avalanche Diode
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  • Feature
  • Typical Application
  • Model Specification
Feature
· Full diffusion process,capsule type ceramic package
· Amplifying gate structure at the center
· Double-sided cooling,High current
Typical Application
· High power converter
· AC & DC motor control, AC &DC switch
· Phase-controlled rectifying
· Active and reactive inversion
Model Specification

Type

VRRM

IF(AV) THS 55℃

IRRM

VFM/IFM 25℃

RTH(j-hs)

Tjm


Outline
V A mA V/A ℃/W KN
ZB200A 100-5000 200 16 1.8/600 0.090 150 3.3-5.5 A-2,8,12,15
ZB300A 100-5000 300 30 1.8/900 0.065 150 5.3-10 A-3,9,16
ZB400A 100-5000 400 40 1.8/1200 0.040 150 10-20 A-4,10,13,17,18
ZB500A 100-5000 500 40 1.8/1500 0.040 150 10-20 A-4,10,13,17,18

Type

VRRM

IF(AV) 
THS 55℃

trr
100℃

Qrr

IFSM
10ms

IRRM

VFM/IFM 25℃

RTH(j-hs)

Tjm


Outline
V A μS μC KA mA V/A ℃/W KN
ZK200A 100-5000 200 2 70 2.7 16 2.2/600 0.090 150 3.3-5.5 A-2,8,12,15
ZK300A 100-5000 300 3 100 4.1 30 2.4/900 0.065 150 5.3-10 A-3,9,16
ZK400A 100-5000 400 3 100 5.4 40 2.4/1200 0.040 150 10-20 A-4,10,13,17,18
ZK500A 100-5000 500 3 120 8 40 2.4/1800 0.033 150 10-20 A-4,10,13,17,18
ZK800A 100-5000 800 3 130 10 40 2.6/2400 0.033 150 10-20 A-5,19
ZK1000A 100-5000 1000 4 150 13 50 2.6/3000 0.030 150 15-20 A-6,11,14,20

 

Note:
■IGT、VGT、IH are test values under 25℃ . Unless otherwise specified,other parameters in the parameter table are test values under Tjm.
■I²t=I²TSM×tw/2:tw=bottom width of half-sinusoid current. Under 50Hz,I²t=0.00512TSM(A²S)
■When working under the current of 60 Hz:ITSM(8.3ms)=ITSM(10M=ms)×1.066,Tj=Tjm I²t(8.3ms)=I²t(10ms)×0.943,Tj=Tjm
■Gate lead: white or colorless,cathode lead (if necessary): red

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