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IGBT Module
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  • Feature
  • Typical Application
  • Model Specification
Feature
· IGBT is a MOSFET and bipolar transistor made of a composite device,the input is extremely MOSFET,the output is extremely PNP transistor,which integration of these two devices are the advantage of.
· With a small power MOSFET device driver and switching sppeed advantageof large capacity,it frequency response range and power MOSFET transistor,and is available to work on dozen of kHz frequency range.
Typical Application

Current value:It indicates the collector DC (continuous) current
Internal connection type:T:bridge arm;L:low end connection;H:high end connection;D:single-tube structure
Package form: A:A-A-pak S:Int-A-pak D:Dual-Int-A-pak
Voltage:The voltage value at the collector and emitter is:voltage × 10(V)
Type:U type: super fast type;K type:super fast type provided with short circuit function(NPT)

Model Specification
Part Name VCES Ic@Tc VCE(ON) ICP IGBT Package
  V A@25℃ A@℃ V A Type  
HFGM75D06V1 600 100 75/70 1.9 140 PT V1
HFGM100D06V1 600 130 100/70 2.2 200 PT V1
HFGM150D06V1 600 200 150/70 1.9 350 PT V1
HFGM200D06V2 600 260 200/70 2.2 400 PT V2
HFGM75D06AV1 600 100 75/80 1.5 140 Trench V1
HFGM100D06AV1 600 130 100/80 1.5 200 Trench V1
HFGM150D06AV1 600 210 150/80 1.5 350 Trench V1
HFGM200D06AV1 600 260 200/80 1.5 400 Trench V1
HFGM200D06AV2 600 260 200/80 1.5 400 Trench V2
HFGM300D06AV3 600 360 300/80 1.5 600 Trench V3
HFGM400D06AV3 600 450 400/80 1.5 800 Trench V3
HFGM75D12SV1 1200 100 75/80 2.8 200 NPT V1
HFGM100D12SV1 1200 130 100/70 3.2 200 NPT V1
HFGM150D12SV3 1200 200 150/70 2.8 350 NPT V3
HFGM200D12SV3 1200 260 200/70 3.2 400 NPT V3
HFGM100D12AV1 1200 130 100/80 1.7 200 Trench V1
HFGM150D12AV3 1200 200 150/80 1.7 350 Trench V3
HFGM200D12AV3 1200 260 200/80 1.7 400 Trench V3
HFGM300D12AV3 1200 360 300/80 1.7 600 Trench V3
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